Measurement of the Excited-State Lifetime of a Microelectronic Circuit

doi:10.1103/PhysRevLett.90.027002

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@ARTICLE{2003PhRvL..90b7002L,
       author = {{Lehnert}, K.~W. and {Bladh}, K. and {Spietz}, L.~F. and {Gunnarsson}, D. and {Schuster}, D.~I. and {Delsing}, P. and {Schoelkopf}, R.~J.},
        title = "{Measurement of the Excited-State Lifetime of a Microelectronic Circuit}",
      journal = {\prl},
     keywords = {74.40.+k, 85.25.Hv, 85.35.Gv, Fluctuations, Superconducting logic elements and memory devices, microelectronic circuits, Single electron devices},
         year = 2003,
        month = jan,
       volume = {90},
       number = {2},
          eid = {027002},
        pages = {027002},
          doi = {10.1103/PhysRevLett.90.027002},
       adsurl = {https://ui.adsabs.harvard.edu/abs/2003PhRvL..90b7002L},
      adsnote = {Provided by the SAO/NASA Astrophysics Data System}
}

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