Abstract: A Co—Cr—Pt-oxide-based sputtering target containing 50 at % or more of Co, more than 0 at % and 20 at % or less of Cr, and more than 0 at % and 25 at % or less of Pt, with the balance being one or more oxides and incidental impurities, wherein the sputtering target contains (A) a composite phase in which Co, Pt, and one or more oxides are mutually dispersed and (B) a metal Cr phase; and wherein the sputtering target comprises 10 or more metal Cr phases having an equivalent circle diameter of greater than 10 ?m and 100 ?m or less in a 1 mm×1 mm field of view under a SEM at a magnification of 50×.

Abstract: To provide an electrical penetration capable of being used in nuclear power plants which are designed assuming operation under conditions of the severe accident. An electrical penetration includes: a tubular sleeve member 10; two or more insulating seal members 20A and 20B arranged inside the sleeve member 10 so as to be spaced from each other; wiring members 60, 60 disposed along the longitudinal direction of the sleeve member 10 so as to extend across two insulating seal members of the two or more insulating seal members 20A and 20B; and outer seal members provided inside the sleeve member 10 and at the outermost portions of the two insulating seal members 20A and 20B. The wiring members 60, 60 are each covered with an insulator made of the same material as those of the outer seal members 21A and 21B.

Abstract: Through the present invention, a thin film containing an FePt-based alloy and carbon, the thin film being capable of being used as a magnetic recording medium, is enabled to be formed using one target, and amount of particles is enabled to be reduced. An FePt—C-based sputtering target containing Fe, Pt, and C, wherein the FePt—C-based sputtering target has a structure in which a C phase substantially being C is dispersed in an FePt-based alloy phase containing 33 mol % or more and 60 mol % or less of Pt with the balance substantially being Fe, an average value of the size indices a of the C phase is 4.0 ?m or more and 9.0 ?m or less, and an average value of the nonspherical indices b of the C phase is 3.0 or more.

Abstract: Through the present invention, a thin film containing an FePt-based alloy and carbon, the thin film being capable of being used as a magnetic recording medium, is enabled to be formed using one target, and amount of particles is enabled to be reduced. An FePt—C-based sputtering target containing Fe, Pt, and C, wherein the FePt—C-based sputtering target has a structure in which a C phase substantially being C is dispersed in an FePt-based alloy phase containing 33 mol % or more and 60 mol % or less of Pt with the balance substantially being Fe, an average value of the size indices a of the C phase is 4.0 ?m or more and 9.0 ?m or less, and an average value of the nonspherical indices b of the C phase is 3.0 or more.

Abstract: An FePt—C-based sputtering target containing Fe, Pt, and C, wherein the FePt—C-based sputtering target has a structure in which primary particles of C that contain unavoidable impurities are dispersed in an FePt-based alloy phase containing 33 at % or more and 60 at % or less of Pt with the balance being Fe and unavoidable impurities, the primary particles of C being dispersed so as not to be in contact with each other.

Abstract: A process for producing a magnetron sputtering target includes: mixing and dispersing an oxide powder and a magnetic metal powder, the magnetic metal powder containing a ferromagnetic metal element, to obtain a magnetic powder mixture; mixing and dispersing an oxide powder and each of a plurality of non-magnetic metal powders, the plurality of non-magnetic metal powders containing the ferromagnetic metal element, the plurality of non-magnetic metal powders containing a different constituent element from each other or containing constituent elements at different ratios from each other, to obtain a plurality of non-magnetic powder mixtures; and mixing and dispersing the magnetic powder mixture and the plurality of non-magnetic powder mixtures to obtain a powder mixture for pressure sintering.

Abstract: A compound represented by formula (1), a liquid crystal composition, a liquid crystal display device are described. In formula (1), for example, the ring A1 and the ring A4 are phenylene or cyclohexylene; Z1, Z2, Z3 and Z4 are a single bond or alkylene having 1 to 6 carbons; L1 is a single bond; s and t are 0; and P1, P2, P3 and P4 are a polymerizable group.

Abstract: Provided is a magnetron sputtering target having a ferromagnetic metal element. This magnetron sputtering target includes: a magnetic phase containing the ferromagnetic metal element; a plurality of non-magnetic phases that each contain the ferromagnetic metal element and that are different in constituent elements or a content ratio of constituent elements; and an oxide phase. At least one of the plurality of non-magnetic phases is more finely interdispersed with the oxide phase than the magnetic phase.

Abstract: The invention provides a new sputtering target that provides a large leakage of magnetic flux, is free of the risk of a change of composition during deposition, and enables deposition under a stable voltage. A sputtering target is that having (1) a Co—Pt magnetic phase including Co and Pt, wherein Pt is included at a proportion of 4 atomic % to 10 atomic %; (2) a Co—Cr—Pt nonmagnetic phase including Co, Cr and Pt, wherein Co and Cr are included at proportions of 30 atomic % or more of Cr and 70 atomic % or less of Co; and (3) an oxide phase including finely dispersed metal oxides.

Abstract: A target for magnetron sputtering, comprising metal Co, metal Cr, and an oxide with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being less than 25 at %, wherein the target comprises: a non-magnetic metal phase containing metal Co and metal Cr with an atomic ratio of the metal Cr to the total of the metal Co and the metal Cr being 25 at % or more and with an atomic ratio of the metal Co to the total of the metal Co and the other metals being more than 0 at % and 45 at % or less; and a magnetic metal phase containing metal Co, wherein a volume ratio of the oxide to the non-magnetic metal phase is more than 0 and 1.2 or less, and wherein the non-magnetic metal phase and the oxide are mutually dispersed.

Abstract: An organic electroluminescent element comprising an anode, a cathode and a plurality of organic compound layers sandwiched between the anode and cathode, the organic compound layers including: a hole-transporting layer made of an organic compound insoluble in alcohols; and an electron-transporting layer formed on the hole-transporting layer by a wet method, the electron-transporting layer being made of a phosphorus-containing organic compound soluble in the alcohols.

Abstract: An FePt-based sputtering target contains Fe, Pt, and a metal oxide, and further contains one or more kinds of metal elements other than Fe and Pt, wherein the FePt-based sputtering target has a structure in which an FePt-based alloy phase and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and less than 60 at % and the one or more kinds of metal elements in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with the total amount of Pt and the one or more kinds of metal elements being 60 at % or less, and wherein the metal oxide is contained in an amount of 20 vol % or more and 40 vol % or less based on the total amount of the target.

Abstract: A process for producing an FePt-based sputtering target includes adding C powder containing unavoidable impurities and metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities so that the C powder and the metal oxide powder are contained to satisfy: 0<??20; 10??<40; and 20??+??40, where ? and ? represent contents of the C powder and the metal oxide powder by vol %, respectively, based on a total amount of the FePt-based alloy powder, the C powder, and the metal oxide powder, followed by mixing the FePt-based alloy powder, the C powder, and the metal oxide powder to produce a powder mixture.

Abstract: A process for producing an FePt-based sputtering target includes adding metal oxide powder containing unavoidable impurities to FePt-based alloy powder containing Pt in an amount of 40 at % or more and less than 60 at % and one or more kinds of metal elements other than Fe and Pt in an amount of more than 0 at % and 20 at % or less with the balance being Fe and unavoidable impurities and with a total amount of Pt and the one or more kinds of metal elements being 60 at % or less so that the metal oxide powder accounts for 20 vol % or more and 40 vol % or less of a total amount of the FePt-based alloy powder and the metal oxide powder, followed by mixing the FePt-based alloy powder and the metal oxide powder to produce a powder mixture.

Abstract: An FePt—C-based sputtering target containing Fe, Pt, and C, wherein the FePt—C-based sputtering target has a structure in which primary particles of C that contain unavoidable impurities are dispersed in an FePt-based alloy phase containing 33 at % or more and 60 at % or less of Pt with the balance being Fe and unavoidable impurities, the primary particles of C being dispersed so as not to be in contact with each other.

Abstract: An FePt—C-based sputtering target contains Fe, Pt, and C and has a structure in which an FePt-based alloy phase and a C phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities. The content of C is 21 at % or more and 70 at % or less based on the total amount of the target.

Abstract: A compound represented by formula (1), a liquid crystal composition, a liquid crystal display device are described. In formula (1), for example, the ring A1 and the ring A4 are phenylene or cyclohexylene; Z1, Z2, Z3 and Z4 are a single bond or alkylene having 1 to 6 carbons; L1 is a single bond; s and t are 0; and P1, P2, P3 and P4 are a polymerizable group.

Abstract: A compound represented by formula (1), a liquid crystal composition, a liquid crystal display device are described. In formula (1), for example, the ring A1 and the ring A4 are phenylene or cyclohexylene; Z1, Z2, Z3 and Z4 are a single bond or alkylene having 1 to 6 carbons; L1 is a single bond; s and t are 0; and P1, P2, P3 and P4 are a polymerizable group.

Abstract: The present invention is to provide a method of favorably forming an organic EL device with the inverted structure by the wet process. On that account, an organic EL device includes a cathode, an electron injection layer, a light emitting layer, a hole transport layer, a hole injection layer, an anode are formed in this order on a substrate. The electron injection layer is formed by applying ink between banks and drying the ink. The ink is formed by dissolving a polymer compound having an organic phosphine oxide skeleton in an alcohol solvent. The light emitting layer is formed by applying ink between components of the bank and the drying the ink. The ink is formed by dissolving material for light emitting layer such as polyphenylene vinylene (PPV) derivative or polyfluorene derivative in a nonpolar solvent.

Abstract: An FePt-based sputtering target has a structure in which an FePt-based alloy phase, a C phase containing unavoidable impurities, and a metal oxide phase containing unavoidable impurities are mutually dispersed, the FePt-based alloy phase containing Pt in an amount of 40 at % or more and 60 at % or less with the balance being Fe and unavoidable impurities, wherein C is contained in an amount of more than 0 vol % and 20 vol % or less based on the total amount of the target, the metal oxide is contained in an amount of 10 vol % or more and less than 40 vol % based on the total amount of the target, and the total content of C and the metal oxide is 20 vol % or more and 40 vol % or less based on the total amount of the target.